skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Understanding the Potential and Limitations of Dilute Nitride Alloys for Solar Cells

Conference ·
OSTI ID:882820

Dilute nitride alloys provide a powerful tool for engineering the band gap and lattice constant of III-V alloys. However, nitrogen degrades the performance of GaAs solar cells. This project seeks to understand and demonstrate the limits of performance of GaInNAs alloys by (a) correlating deep-level transient spectroscopy (DLTS) data with device performance and (b) using molecular beam epitaxy (MBE) to reduce background impurity concentrations.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
882820
Report Number(s):
NREL/CP-520-38998
Resource Relation:
Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)
Country of Publication:
United States
Language:
English

Similar Records

Role of Ion Damage on Unintentional Ca Incorporation During the Plasma-Assisted Molecular-Beam Epitaxy Growth of Dilute Nitrides Using N2/Ar Source Gas Mixtures
Journal Article · Thu May 01 00:00:00 EDT 2008 · Journal of Vacuum Science Technology. Part B. Microelectronics and Nanometer Structures · OSTI ID:882820

Unintentional Calcium Incorporation in Ga(Al, In, N)As
Journal Article · Tue May 01 00:00:00 EDT 2007 · Journal of Vacuum, Science and Technology. B, Microelectronics and Nanometer Structures · OSTI ID:882820

Deep level defects in dilute GaAsBi alloys grown under intense UV illumination
Journal Article · Thu Jul 21 00:00:00 EDT 2016 · Semiconductor Science and Technology · OSTI ID:882820