Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2
- Bellevue, WA
- Seattle, WA
An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EG-77-C-01-4042
- Assignee:
- Boeing Company (Seattle, WA)
- Patent Number(s):
- US RE31,968
- OSTI ID:
- 875289
- Country of Publication:
- United States
- Language:
- English
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Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds
Methods for forming thin-film heterojunction solar cells from I-III-VI2
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methods
forming
thin-film
heterojunction
solar
cells
i-iii-vi
improved
cell
relatively
light-to-electrical
energy
conversion
efficiency
characterized
comprises
p-n
type
formed
semiconductor
layer
comprising
photovoltaic
active
material
selected
chalcopyrite
ternary
materials
vacuum
deposited
composition-graded
ranging
microns
congruent
region
preferably
resistivity
p-type
superimposed
transient
n-type
defining
homojunction
ii
interdiffusion
elemental
constituents
discrete
juxtaposed
regions
causes
government
rights
pursuant
contract
eg-77-c-01-4042
subcontract
xj-9-8021-1
awarded
department
transient p-n
photovoltaic active
p-n homojunction
n-type material
material defining
layer comprising
n-type semiconductor
heterojunction solar
cell comprises
conversion efficiency
active material
electrical energy
solar cell
semiconductor material
solar cells
semiconductor layer
energy conversion
preferably comprises
material selected
material preferably
transient n-type
p-type semiconductor
vacuum deposited
resistivity n-type
resistivity region
ternary materials
thin-film heterojunction
juxtaposed regions
light-to-electrical energy
junction solar
chalcopyrite ternary
film heterojunction
elemental constituents
superimposed region
forming thin-film
layer ranging
layer defining
discrete juxtaposed
type heterojunction
homojunction layer
heterojunction formed
improved thin-film
type material
type semiconductor
preferably comprise
DESIGN
FABRICATION
ENERGY EFFICIENCY
VACUUM COATING
P-N JUNCTIONS
N-TYPE CONDUCTORS
/136/257/427/438/