Auger and Radiative Recombination Coefficients in 0.55 eV InGaAsSb
A radio-frequency (RF) photoreflectance technique, which senses changes in sample conductivity as carriers recombine following excitation by a laser pulse, has been used to measure the recombination parameters in 0.55 eV InGaAsSb lattice matched to GaSb. Doubly-capped lifetime structures with variable active layer thicknesses are used to extract the surface recombination velocity (SRV), while analysis of the samples with different doping concentrations is used to obtain Auger (C) and radiative (B) recombination parameters. Parameter extraction for the samples evaluated gives C = 1 {+-} 0.4 x 10{sup -28} cm{sup 6}/s and B = 3 {+-} 1.5 x 10{sup -11} cm{sup 3}/s for 0.55 eV InGaAsSb lattice matched to GaSb. The Auger and radiative recombination coefficients obtained from high-level injection decay times in low doping concentration samples show very good agreement with values obtained from low-level injection conditions.
- Research Organization:
- KAPL (Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- DE-AC12-00SN39357
- OSTI ID:
- 850132
- Report Number(s):
- LM-04K066; TRN: US200518%%128
- Country of Publication:
- United States
- Language:
- English
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