Mutual passivation effects in Si-doped diluted In{sub y}Ga{sub 1-y}As{sub 1-x}N{sub x} alloys
We report systematic investigations of the mutual passivation effects of Si hydrogenic donors and isovalent nitrogen in dilute InGaAs{sub 1-x}N{sub x} alloys. Upon thermal annealing at temperatures above {approx}650 C, the Si atoms diffuse assisted by the formation and migration of Ga vacancies. When they find nitrogen atoms, they form stable Si{sub Ga}-N{sub As} nearest-neighbor pairs. As a result of the pair formation, the electrical activity of Si{sub Ga} donors is passivated. At the same time, the effect of an equal number of N{sub As} atoms is also deactivated. The passivation of the shallow donors and the N{sub As} atoms is manifested in a drastic reduction in the free electron concentration and, simultaneously, an increase in the fundamental band gap. Analytical calculations of the passivation process based on Ga vacancies mediated diffusion show good agreement with the experimental results. Monte Carlo simulations have also been performed for a comparison with these results. The effects of mutual passivation on the mobility of free electrons are quantitatively explained on the basis of the band anticrossing model. Optical properties of annealed Si-doped InGaAs{sub 1-x}N{sub x} samples are also discussed.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Basic Energy Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 820661
- Report Number(s):
- LBNL-53455; R&D Project: 513360; TRN: US200405%%69
- Journal Information:
- Physical Review B, Vol. 68, Issue 19; Other Information: Journal Publication Date: Nov. 2003; PBD: 21 Jul 2003
- Country of Publication:
- United States
- Language:
- English
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