Band anticrossing in highly mismatched group II-VI semiconductor alloys
We have successfully synthesized highly mismatched Cd{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys by high dose implantation of O ions into Cd{sub 1-y}Mn{sub y}Te crystals. In crystals with y > 0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd{sub 0.38}Mn{sub 0.62}Te. The results are consistent with the band anticrossing model which predicts that a repulsive interaction between localized states of O located above the conduction band edge and the extended states of the conduction band causes the band gap reduction. A best fit of the measured band gap energies of the O ion synthesized Cd{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys using the band anticrossing model for y < 0.55 suggests an activation efficiency of only {approx}5% for implanted O in Cd{sub 1-y}Mn{sub y}Te.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Materials Science and Engineering Division (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 803853
- Report Number(s):
- LBNL-51121; R&D Project: 513320; B& R KC0201030; TRN: US200301%%541
- Resource Relation:
- Conference: U.S. Workshop on the Physics and Chemistry of II-VI Materials, Kissimmee, FL (US), 10/03/2001--10/05/2001; Other Information: PBD: 3 Oct 2001
- Country of Publication:
- United States
- Language:
- English
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