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Title: Novel duplex vapor-electrochemical method for silicon solar cells. Quarterly progress report Nos. 2 and 3, May 1, 1976--October 31, 1976

Technical Report ·
DOI:https://doi.org/10.2172/7307173· OSTI ID:7307173

Silicon can be produced by the reduction of SiF/sub 4/ gas with sodium in a reaction that initiates at temperatures lower than 175/sup 0/C. The kinetics of the reaction can be affected by varying the partial pressure of SiF/sub 4/ gas. Emission spectrographic analysis of product silicon shows the major impurity to be sodium; but the metallic impurities that are known to degrade solar cell efficiency, such as Ti, V, Zr, and Cr, were not detected and must be less than 10 ppM.

Research Organization:
Stanford Research Inst., Menlo Park, CA (USA)
Sponsoring Organization:
US Energy Research and Development Administration (ERDA); JET PROPULSION LABORATORY
DOE Contract Number:
NAS-7-100-954471
OSTI ID:
7307173
Report Number(s):
ERDA/JPL/954471-76/2; ERDA/JPL/954471-76/3
Country of Publication:
United States
Language:
English