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Title: Response of a Nb/Al[sub 2]O[sub 3]/Nb tunnel junction to picosecond electrical pulses

Conference ·
OSTI ID:7155591
; ; ; ;  [1];  [2]
  1. Lawrence Berkeley Lab., CA (United States)
  2. Conductus, Inc., Sunnyvale, CA (United States)

Picosecond electrical pulses were used to measure the broadband quasiparticle response of a Nb trilayer SIS (superconductor-insulator-superconductor) junction in both the linear and nonlinear regimes. The electrical pulses were generated by illuminating a Si photoconducting switch using a Ti-sapphire laser. The SIS response is inferred by measuring the dc current induced by interfering two electrical pulses at the junction, as a function of the time delay between them. Results are obtained for bias voltages of 1.0 and 2.0 mV; at the latter, two-photon absorption was detected.

Research Organization:
Lawrence Berkeley Lab., CA (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
7155591
Report Number(s):
LBL-32901; CONF-930150-1; ON: DE93002625
Resource Relation:
Conference: Optical Society of America (OSA) meeting on ultrafast optics and optoelectronics, San Francisco, CA (United States), 25-27 Jan 1993
Country of Publication:
United States
Language:
English