Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition
The authors report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb emitters using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multi-stage, type 1, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in a horizontal reactor. Broadband LED`s produced 2 mW average power at 3.7 {micro}m and 80 K and 0.1 mW at 4.3 {micro}m and 300 K. a multi-stage, 3.8--3.9 {micro}m laser structure operated up to T = 180 K. At 80 K, peak-power > 100 mW/facet and a high slope efficiency (48%) were observed in these gain guided lasers.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 661741
- Report Number(s):
- SAND-98-0112C; CONF-980576-; ON: DE98007119; BR: DP0102011; TRN: AHC29814%%197
- Resource Relation:
- Conference: 9. international conference of metal organic vapor phase epitaxy, La Jolla, CA (United States), 30 May - 4 Jun 1998; Other Information: PBD: [1998]
- Country of Publication:
- United States
- Language:
- English
Similar Records
InAsSb-based mid-infrared lasers (3.5--3.9 {micro}m) and light-emitting diodes with AlAsSb claddings and semi-metal electron injection grown by metal-organic chemical vapor deposition
Recent Progress in the Growth of Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition