The preparation of InAsSb/InSb SLS (strained-layer superlattice) and InSb photodiodes by MOCVD

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6334160

Biefeld, R M; Cunningham, B T; Kurtz, S R; Wendt, J R

Infrared absorption and photoluminescence have been demonstrated for InAs{sub 1-x}Sb{sub x}/InSb strained-layer superlattices (SLS's) in the 8--15 {eta}m region for As content less than 20%. This extended infrared activity is due to the type II heterojunction band offset in these SLS's. The preparation of the first MOCVD grown p-n junction diode was achieved by using dimethyltellurium as an in-type dopant. Several factors, such as background doping and dopant profiles affect the performance of this device. InSb diodes have been prepared using tetraethyltin. The resulting current-voltage characteristics are improved over those of diodes grown previously using dimethyltellurium. Doping levels of 8 {times} 10{sup 15} to 5 {times} 10{sup 18} cm{sup {minus}3} and mobilities of 6.7 {times} 10{sup 4} to 1.1 {times} 10{sup 4} cm{sup 2}/Vs have been measured for Sn doped InSb. SLS diode structures have been prepared using Sn and Cd as the dopants. Structures prepared with p-type buffer layers are more reproducible. 5 refs., 4 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6334160
• Report Number(s): SAND-90-3200C; CONF-901105-81; ON: DE91006781
• Resource Relation: Conference: Fall meeting of the Materials Research Society, Boston, MA (USA), 24 Nov - 1 Dec 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ARSENIC COMPOUNDS
CHEMICAL VAPOR DEPOSITION
INDIUM ANTIMONIDES
SEMICONDUCTOR MATERIALS
CADMIUM
DOPED MATERIALS
PHOTODIODES
SUPERLATTICES
TIN
ANTIMONIDES
ANTIMONY COMPOUNDS
CHEMICAL COATING
DEPOSITION
ELEMENTS
INDIUM COMPOUNDS
MATERIALS
METALS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE COATING
360601* - Other Materials- Preparation & Manufacture
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)