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Title: Comparison of experimental and theoretical XEDS cross-sections and k-factors as a function of accelerating voltage

Conference ·
OSTI ID:6312224

For nearly fifteen years k-factor measurements have been made by varying the composition of the standards at fixed accelerating voltage and reporting the change in the experimental k-factor with atomic number. From this data a best model of the ionization cross-section is frequently proposed for use in quantitative x ray analysis in the AEM, however it is valid only at that fixed voltage. It is usually difficult to judge the validity of the selection of cross-section using this type of plot and difference plots. These difference plots illustrate that the k-factor at a fixed voltage is not particularly sensitive for determination of the correct ionization cross-section parameterization, due to normalization effects which are inherent in it's definition. In fact, calculations show that the relative errors between cross-section models as shown in the difference plot are of the same order of magnitude as those which one would calculate due to inaccuracy in the thickness of the various Si(Li) detector parameters. In this paper experimental measurements of the absolute intensity variation of elemental standards are used to illustrate the differences cross-section models, which are then subsequently compared to experimental variations in the k-factor with accelerating voltage. With the advent of medium voltage analytical microscopes routinely available to the microscopy community, it becomes essential to understand how the k-factor varies with accelerating voltage in order that errors in quantitative analysis can be avoided should experimental or theoretical k-factors from lower voltage instruments be applied to the medium voltage regime. 8 refs., 5 figs.

Research Organization:
Argonne National Lab., IL (USA)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
6312224
Report Number(s):
CONF-900877-10; ON: DE91004428
Resource Relation:
Conference: 12. international congress for electron microscopy, Seattle, WA (USA), 12-18 Aug 1990
Country of Publication:
United States
Language:
English