Electron sputtering in the analytical electron microscope: Calculations and experimental data
The environment of the electron microscope is particularly severe when one considers the energy deposited in a specimen during typical experimental conditions. Conventional imaging experiments tend to employ electron current densities ranging from approx.0.1 to 1 A/cm/sup 2/ while during microanalysis conditions probe current densities can range from 10 to values as high as 10/sup 5/ A/cm/sup 2/. At 100 kV this corresponds to power densities from 100 Kilowatts/cm/sup 2/ to 10/sup 4/ Megawatts/cm/sup 2/. These energy deposition rates can result in electron irradiation damage which can substantially alter the structure and composition of a specimen through either ionization damage in organics or by displacement damage in inorganics and/or combinations thereof. For the most part materials scientists operating an analytical electron microscope (AEM) in the 100 to 200 kV regime studying metallic and/or ceramic specimens have been spared the need to consider either of these effects as their specimens have tended to be sufficiently resilient. However, the advent of the new medium voltage microscopes operating in the 300 to 400 kV regime with high brightness guns and clean or ultrahigh vacuum systems has necessitated a reevaluation of the effects of higher voltage operation in light of the destructive nature of the electron beam particularly under microanalysis conditions.
- Research Organization:
- Argonne National Lab., IL (USA)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 6177432
- Report Number(s):
- CONF-8705165-1; ON: DE87011457
- Resource Relation:
- Conference: Workshop on intermediate voltage microscopy and its application to materials science, Ottawa, Canada, 26 May 1987; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
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MICROANALYSIS
CROSS SECTIONS
ELECTRON DENSITY
IRRADIATION
SPUTTERING
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