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Title: Large-area non-crystalline semiconductor detectors

Conference ·
OSTI ID:6153790

The properties of various non-crystalline semiconductors are considered for use as position-sensitive detectors. Amorphous silicon and conducting plastic can be doped to form NP depletion regions similar to those in single crystal silicon, but without the limitation of single-crystal size. Chalcogenide glassy materials such as Te-Se-Ge compounds as well as some metallic oxides such as the Vanadium oxides have switching and memory properties. They could serve as x,y location identifying devices when triggered by amplified pulses from a parallel plate or multistep gas-filled detector stage in order to resolve the multitrack ambiguity for x,y readout schemes.

Research Organization:
Lawrence Berkeley Lab., CA (USA)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6153790
Report Number(s):
LBL-15866; CONF-830224-12; ON: DE83011673
Resource Relation:
Conference: DPF workshop on collider detectors: present capabilities and future possibilities, Berkeley, CA, USA, 28 Feb 1983
Country of Publication:
United States
Language:
English