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Title: Ion beam mixing of marker layers in Al and Si. [300 keV Ar ions]

Conference ·
OSTI ID:6121870

Ion beam mixing experiments on thin Pt, Au, and Ni markers in Al and Si have performed at 17, 85, and 300 K. After irradiation with 300-keV Ar ions the broadening and relative shifts of the markers have been determined by RBS measurements. The marker broadenings are more pronounced in Si than in Al; in both matrices the broadenings decrease in the following order: Au, Pt, and Ni. No dependence of mixing on irradiation temperature was observed between 17 and 300 K. The shifts of the heavy Au and Pt markers relative to the Ni markers are approximately equal to the experimental accuracy. However, a shift of the Ni marker toward the surface relative to the heavier Au and Pt markers was consistently observed. 13 references, 2 figures.

Research Organization:
Argonne National Lab., IL (USA); Kernforschungsanlage Juelich G.m.b.H. (Germany, F.R.). Inst. fuer Festkoerperforschung
DOE Contract Number:
W-31-109-ENG-38
OSTI ID:
6121870
Report Number(s):
CONF-840760-17; ON: DE85006227
Resource Relation:
Conference: Ion beam modification of materials conference, Ithaca, NY, USA, 16 Jul 1984
Country of Publication:
United States
Language:
English