Material parameters in a thick hydrogenated amorphous silicon detector and their effect on signal collection

Conference · Sat Apr 01 00:00:00 EST 1989

OSTI ID:6104274

Qureshi, S; Perez-Mendez, V; Kaplan, S N; Fujieda, I; Cho, G; Street, R A

Transient photoconductivity and ESR measurements were done to relate the ionized dangling bond density of thick hydrogenated amorphous silicon (a-Si:H) detectors. We found that only a fraction (/approximately/30--35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples also show that this fraction is about 0.3. An explanation based on the shift of the Fermi energy is given. The measurements show that the time dependence of relaxation is a stretched exponential. 8 refs., 4 figs., 1 tab.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6104274
• Report Number(s): LBL-26997; CONF-890426-19; ON: DE89012978
• Resource Relation: Conference: Spring meeting of the Materials Research Society, San Diego, CA, USA, 24 Apr 1989; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SI SEMICONDUCTOR DETECTORS
CARRIER MOBILITY
CROSS SECTIONS
ELECTRON SPIN RESONANCE
FERMI LEVEL
PHOTOCONDUCTIVITY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY LEVELS
MAGNETIC RESONANCE
MEASURING INSTRUMENTS
MOBILITY
PHYSICAL PROPERTIES
RADIATION DETECTORS
RESONANCE
SEMICONDUCTOR DETECTORS
440104* - Radiation Instrumentation- High Energy Physics Instrumentation