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Title: Microtechnology

Abstract

Research reported in the thrust area of microtechnology includes: advanced plasma etch processes for high-aspect-ratio, submicron-feature-size applications; integration of PCR amplification and capillary electrophoresis in a DNA analysis device; microactuators for optical interferometry; thin silicon windows; eutectic bonding and fusion bonding; solid-source MBE-grown GaAs/AlGaAs ridge-waveguide semiconductor optical amplifiers; large area lithography; phase-shift lithography; thermally robust optical semiconductor devices using AlGaInAs grown by molecular beam epitaxy; and porous silicon formation and characterization.

Authors:
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
595227
Report Number(s):
UCRL-ID-125472
ON: DE98050271
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 1 Feb 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; LAWRENCE LIVERMORE NATIONAL LABORATORY; RESEARCH PROGRAMS; ETCHING; DNA; CHEMICAL ANALYSIS; ACTUATORS; THIN FILMS; BONDING; WAVEGUIDES; MOLECULAR BEAM EPITAXY

Citation Formats

Mariella, R P. Microtechnology. United States: N. p., 1997. Web. doi:10.2172/595227.
Mariella, R P. Microtechnology. United States. https://doi.org/10.2172/595227
Mariella, R P. 1997. "Microtechnology". United States. https://doi.org/10.2172/595227. https://www.osti.gov/servlets/purl/595227.
@article{osti_595227,
title = {Microtechnology},
author = {Mariella, R P},
abstractNote = {Research reported in the thrust area of microtechnology includes: advanced plasma etch processes for high-aspect-ratio, submicron-feature-size applications; integration of PCR amplification and capillary electrophoresis in a DNA analysis device; microactuators for optical interferometry; thin silicon windows; eutectic bonding and fusion bonding; solid-source MBE-grown GaAs/AlGaAs ridge-waveguide semiconductor optical amplifiers; large area lithography; phase-shift lithography; thermally robust optical semiconductor devices using AlGaInAs grown by molecular beam epitaxy; and porous silicon formation and characterization.},
doi = {10.2172/595227},
url = {https://www.osti.gov/biblio/595227}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Feb 01 00:00:00 EST 1997},
month = {Sat Feb 01 00:00:00 EST 1997}
}