Fundamental studies of the chemical vapor deposition of diamond

Stevenson, D A

doi:10.2172/5639356

Title: Fundamental studies of the chemical vapor deposition of diamond

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Abstract

The plasma or thermally enhanced low pressure chemical vapor deposition of diamond films is an exciting development with many challenging fundamental problems. The early stages of nucleation is relevant to the initial growth rate and the perfection and morphology of the deposit. To isolate one of the factors that influence nucleation, we have studied the effect of surface topography on the nucleation process. Our earlier work has shown preferential nucleation on sharp convex features and we have proposed several possible reasons for this behavior, including dangling bonds at the convex features. In our recent work, we have extended our investigation to include a novel patterning of silicon substrates used to pattern silicon solar cells. The results are consistent with our earlier observations that the majority of nucleation events occur on protruding surface features. In an effort to establish whether dangling bonds at the protruding surfaces may be responsible for the selective nucleation, we have evaluated the dangling bond concentration using electron spin resonance. We have carried out deposition under nominally identical surface topography, but with different concentrations of dangling bonds at or near the surface. The results of this study indicate that dangling bonds play a minor role in enhancingmore »« less

Authors:: Stevenson, D A

Publication Date:: Tue Jan 01 00:00:00 EST 1991

Research Org.:: Stanford Univ., CA (United States). Dept. of Materials Science and Engineering

Sponsoring Org.:: USDOE; USDOE, Washington, DC (United States)

OSTI Identifier:: 5639356

Report Number(s):: DOE/ER/45345-T1
ON: DE92010327

DOE Contract Number:: FG05-88ER45345

Resource Type:: Technical Report

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; DIAMONDS; CHEMICAL VAPOR DEPOSITION; CHEMICAL BONDS; FILMS; MORPHOLOGY; NUCLEATION; PROGRESS REPORT; SILICON; SUBSTRATES; CARBON; CHEMICAL COATING; DEPOSITION; DOCUMENT TYPES; ELEMENTAL MINERALS; ELEMENTS; MINERALS; NONMETALS; SEMIMETALS; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture; 360602 - Other Materials- Structure & Phase Studies

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                    Stevenson, D A. Fundamental studies of the chemical vapor deposition of diamond.  United States: N. p., 1991. 
        Web.  doi:10.2172/5639356.

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                    Stevenson, D A. Fundamental studies of the chemical vapor deposition of diamond.  United States.  https://doi.org/10.2172/5639356

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                    Stevenson, D A. 1991.  
        "Fundamental studies of the chemical vapor deposition of diamond".  United States.  https://doi.org/10.2172/5639356.  https://www.osti.gov/servlets/purl/5639356.

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@article{osti_5639356,

  title        = {Fundamental studies of the chemical vapor deposition of diamond},

  author       = {Stevenson, D A},

  abstractNote = {The plasma or thermally enhanced low pressure chemical vapor deposition of diamond films is an exciting development with many challenging fundamental problems. The early stages of nucleation is relevant to the initial growth rate and the perfection and morphology of the deposit. To isolate one of the factors that influence nucleation, we have studied the effect of surface topography on the nucleation process. Our earlier work has shown preferential nucleation on sharp convex features and we have proposed several possible reasons for this behavior, including dangling bonds at the convex features. In our recent work, we have extended our investigation to include a novel patterning of silicon substrates used to pattern silicon solar cells. The results are consistent with our earlier observations that the majority of nucleation events occur on protruding surface features. In an effort to establish whether dangling bonds at the protruding surfaces may be responsible for the selective nucleation, we have evaluated the dangling bond concentration using electron spin resonance. We have carried out deposition under nominally identical surface topography, but with different concentrations of dangling bonds at or near the surface. The results of this study indicate that dangling bonds play a minor role in enhancing nucleation, in contrast to a substantial role played by special surface topographical features. In the course of the past year, we have submitted four manuscripts for publication and have made six presentations.},

  doi          = {10.2172/5639356},

  url          = {https://www.osti.gov/biblio/5639356},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jan 01 00:00:00 EST 1991},

  month        = {Tue Jan 01 00:00:00 EST 1991}

}

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