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Title: Emerging materials for solar cell applications: electrodeposited CdTe. Third quarter report, September 1-November 30, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5112503· OSTI ID:5112503

Major emphasis during the period was centered on improving the material properties of electrodeposited CdTe. Using newly devised means for peeling thin CdTe films off the ITO-coated glass substrates, it was possible to accurately measure material density and electrical resistivity. Density proved to be 40% below the bulk CdTe figure of about 6 gm/cm/sup 3/, while resistivity of supposedly doped CdTe films exceeded 10/sup 5/..cap omega.. - cm. These findings prompted initiation of a beneficial change in plating procedures which increased the thin film polycrystalline CdTe density to the bulk value while, at the same time, good columnar growth was obtained. Films made under the old plating process were made into Schottky diodes showing good uniformity and V/sub oc/ values generally exceeding 0.5V. Short circuit current of the best of these was 9.5mA/cm/sup 2/ despite the fact that light entered through a thick gold film and was strongly attenuated.

Research Organization:
Monosolar, Inc., Santa Monica, CA (USA)
DOE Contract Number:
AC04-79ET23008
OSTI ID:
5112503
Report Number(s):
DOE/ET/23008-T2
Country of Publication:
United States
Language:
English