The Band Gap of AlGaN Alloys

Journal Article · Fri Jan 29 00:00:00 EST 1999 · Applied Physics Letters

OSTI ID:3336

Biefeld, R M; Crawford, M H; Han, J; Lee, S R; Petersen, G A; Wright, A F

The band gap of AlXGal.XN is measured for the composition range 0s<0.45; the resulting bowing parameter, b=+O.69 eV, is compared to 20 previous works. A correlation is found between the measured band gaps and the methods used for epitaxial growth of the AlXGal_XN: directly nucleated or buffered growths of AlXGal-XN initiated at temperatures T>800 C on sapphire usually lead to stronger apparent bowing (b> +1.3 eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b<+ 1.3 eV). Extant data suggests that the correct band-gap bowing parameter for AlXGal-XN is b=+O.62 (N.45) eV.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 3336
• Report Number(s): SAND99-0274J; ON: DE00003336
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Aluminium Nitrides
Gallium Nitrides
Energy Gap