Production data on 0.55 eV InGaAs thermophotovoltaic cells
- Spire Corp., Bedford, MA (United States)
- Lockheed Martin, Inc., Schenectady, NY (United States)
Low bandgap 0.55 eV (2.25 {micro}m cutoff wavelength) indium gallium arsenide (In{sub 0.72}Ga{sub 0.28}As) thermophotovoltaic (TPV) cells use much more of the long wavelength energy emitted from low temperature (< 1,200 C) thermal sources than either Si or GaSb cells. Data are presented on a statistically significant number (2,500) of these TPV cells, indicating the performance obtainable in large numbers of cells. This data should be useful in the design and modeling of TPV system performance. At 1.2 A/cm{sup 2} short-circuit current, an average open-circuit voltage of 283 mV is obtained with a 60% fill factor. The peak external quantum efficiency for uncoated cells is 65% and is over 50% from 1.1 to 2.2 {micro}m. Internal quantum efficiency is over 76% in this range assuming an estimated 34% reflectance loss.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 296645
- Report Number(s):
- KAPL-P-000045; CONF-960513-; ON: DE99000444; TRN: AHC29903%%43
- Resource Relation:
- Conference: 25. photovoltaic solar energy conference, Washington, DC (United States), 13-17 May 1996; Other Information: PBD: May 1996
- Country of Publication:
- United States
- Language:
- English
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