Use of in situ scanning tunneling microscopy for the study of dye sensitization of semiconductor electrodes. Progress report, September 15, 1992--August 15, 1995
In the three years of this contract, the authors have set up a state-of-the-art computer-controlled photoelectrochemical characterization laboratory with facilities to measure Mott-Schottky behavior, photocurrent spectra and photocurrent voltage curves on semiconductor electrodes. They have also set up a Bridgeman crystal growth furnace for preparing their own single crystals of SnS{sub 2} and other semiconductor materials for the photoelectrochemical studies. The first boules of SnS{sub 2} have recently been prepared. They have also modified a scanning tunneling microscope to perform photo-STM experiments to spatially resolve photocurrents on semiconductor surfaces. In addition, the acquisition of a Ti:sapphire laser system from the DOE-URI program will give us the power and flexibility in the light source to provide a better chance of single molecule detection. The results on sensitization will be summarized below.
- Research Organization:
- Colorado State Univ., Fort Collins, CO (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-92ER14308
- OSTI ID:
- 238475
- Report Number(s):
- DOE/ER/14308-T1; ON: DE96010301; TRN: AHC29612%%24
- Resource Relation:
- Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
40 CHEMISTRY
SEMICONDUCTOR MATERIALS
OPTICAL PROPERTIES
ELECTRICAL PROPERTIES
TIN SULFIDES
MOLYBDENUM SULFIDES
PROGRESS REPORT
SCHOTTKY EFFECT
PHOTOCURRENTS
BRIDGMAN METHOD
METHYLENE BLUE
DYES
QUANTUM EFFICIENCY
SURFACE PROPERTIES
CRYSTAL DEFECTS
N-TYPE CONDUCTORS
ETCHING
MICROSCOPY