Growth of oriented rare-earth-transition-metal thin films
Conference
·
OSTI ID:226426
- Argonne National Lab., IL (United States)
Rare-earth-transition-metal thin films are successfully grown by magnetron sputtering onto single-crystal MgO substrates with epitaxial W buffer layers. The use of epitaxial W buffer layers allows oriented single-phase films to be grown. Sm-Co films grown onto W(100), have strong in-plane anisotropy and coercivities exceeding 5 T at 5 K whereas Fe-Sm films have strong perpendicular anisotropy and are magnetically soft.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 226426
- Report Number(s):
- ANL/MSD/CP-88691; CONF-960425-4; ON: DE96009042; TRN: 96:002824
- Resource Relation:
- Conference: 1996 IEEE international magnetics conference, Seattle, WA (United States), 9-12 Apr 1996; Other Information: PBD: 1996
- Country of Publication:
- United States
- Language:
- English
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