High Efficiency Narrow Gap and Tandem Junction Devices: Final Technical Report, 1 May 2002--31 October 2004

Technical Report · Tue Mar 01 00:00:00 EST 2005

DOI:https://doi.org/10.2172/15011482· OSTI ID:15011482

Madan, A

The work described in this report uses a modified pulsed plasma-enhanced chemical vapor deposition (PECVD) technique that has been successfully developed to fabricate state-of-the-art nc-Si materials and devices. Specifically, we have achieved the following benchmarks: nc SiH device with an efficiency of 8% achieved at a deposition rate of {approx}1 A/s; nc SiH device with an efficiency of 7% achieved at a deposition rate of {approx}5 A/s; large-area technology developed using pulsed PECVD with uniformity of +/-5% over 25 cm x 35 cm; devices have been fabricated in the large-area system (part of Phase 3); an innovative stable four-terminal (4-T) tandem-junction device of h> 9% fabricated. (Note that the 4-T device was fabricated with existing technology base and with further development can reach stabilized h of 12%); and with improvement in Voc {approx} 650 mV, from the current value of 480 mV can lead to stable 4-T device with h>16%. Toward this objective, modified pulsed PECVD was developed where layer- by-layer modification of nc-SiH has been achieved. (Note that due to budget cuts at NREL, this project was curtailed by about one year.)

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 15011482
• Report Number(s): NREL/SR-520-37718; ZDJ-2-30630-31; TRN: US200507%%328
• Resource Relation: Other Information: PBD: 1 Mar 2005; Related Information: Work performed by MVSystems, Inc., Golden, Colorado
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
BENCHMARKS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
EFFICIENCY
MODIFICATIONS
ORGANIC COMPOUNDS
VOLATILE MATTER
PV
MODULE
SOLAR CELLS
MANUFACTURER
DEVICE
NANO-CRYSTALLINE SILICON (NC-SI)
CONTINUOUS WAVE (CW)
QUANTUM EFFICIENCY (QE)
TANDEM JUNCTIONS
LARGE AREA
SOLAR ENERGY - PHOTOVOLTAICS