New Thin Film CuGaSe2/Cu(In,Ga)Se2 Bifacial, Tandem Solar Cell with Both Junctions Formed Simultaneously

Conference · Wed May 01 00:00:00 EDT 2002

OSTI ID:15000989

Young, D L; Abu-Shama, J; Noufi, R; Li, X; Keane, J; Gessert, T A; Ward, J S; Contreas, M; Symko-Davies, M; Coutts, T J

Thin films of CuGaSe2 and Cu(In,Ga)Se2 were evaporated by the 3-stage process onto opposite sides of a single piece of soda-lime glass, coated bifacially with an n+/-TCO. Junctions were formed simultaneously with each of the p-type absorbers by depositing thin films of n-CdS via chemical bath deposition (CBD) at 60C. The resulting four-terminal device is a non-mechanically stacked, two-junction tandem. The unique growth sequence protects the temperature-sensitive p/n junctions. The initial device (h= 3.7%, Voc= 1.1 V[AM1.5]) suffered from low quantum efficiencies. Initial results are also presented from experiments with variations in growth sequence and back reflectors.

• Research Organization: National Renewable Energy Lab., Golden, CO. (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 15000989
• Report Number(s): NREL/CP-520-31440; TRN: US200401%%367
• Resource Relation: Conference: Presented at the 29th IEEE PV Specialists Conference, New Orleans, LA (US), 05/20/2002--05/24/2002; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, Louisiana
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
DEPOSITION
GLASS
ORGANIC COMPOUNDS
SOLAR CELLS
THIN FILMS
VOLATILE MATTER
SOLAR ENERGY
PV
TANDEM SOLAR CELL
THIN-FILM
THREE-STAGE PROCESS
FOUR-TERMINAL DEVICE
SCANNING ELECTRON MICROSCOPY (SEM)
ELECTRON PROBE MICROANALYSIS (EPMA)
HIGH-TEMPERATURE-SENSITIVE LAYERS
SOLAR ENERGY - PHOTOVOLTAICS