Novel Fabrication and Simple Hybridization of Exotic Material MEMS
Work in materials other than silicon for MEMS applications has typically been restricted to metals and metal oxides instead of more ''exotic'' semiconductors. However, group III-V and II-VI semiconductors form a very important and versatile collection of material and electronic parameters available to the MEMS and MOEMS designer. With these materials, not only are the traditional mechanical material variables (thermal conductivity, thermal expansion, Young's modulus, etc.) available, but also chemical constituents can be varied in ternary and quaternary materials. This flexibility can be extremely important for both friction and chemical compatibility issues for MEMS. In addition, the ability to continually vary the bandgap energy can be particularly useful for many electronics and infrared detection applications. However, there are two major obstacles associated with alternate semiconductor material MEMS. The first issue is the actual fabrication of non-silicon devices and the second impediment is communicating with these novel devices. We will describe an essentially material independent fabrication method that is amenable to most group III-V and II-VI semiconductors. This technique uses a combination of non-traditional direct write precision fabrication processes such as diamond turning, ion milling, laser ablation, etc. This type of deterministic fabrication approach lends itself to an almost trivial assembly process. We will also describe in detail the mechanical, electrical, and optical self-aligning hybridization technique used for these alternate-material MEMS.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (US)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 14609
- Report Number(s):
- ORNL/CP-104193; TRN: AH200129%%337
- Resource Relation:
- Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 13 Nov 1999
- Country of Publication:
- United States
- Language:
- English
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