Status of ion implantation doping and isolation of III-V nitrides
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of Florida, Gainesville, FL (United States); and others
Ion implantation doping and isolation has played a critical role in the realization of high performance photonic and electronic devices in all mature semiconductor material systems. This is also expected to be the case for the binary III-V nitrides (InN, GaN, and AlN) and their alloys as the epitaxial material quality improves and more advanced device structures are fabricated. With this in mind, we review the status of implant doping and isolation of GaN and the ternary alloys AlGaN, InGaN, and InAlN. In particular, we reported on the successful n- and p-type doping of GaN by ion implantation of Mg+P and Si, respectively, and subsequent high temperature rapid thermal anneals in excess of 1000{degrees}C. In the area of implant isolation, N-implantation has been shown to compensate both n- and p-type GaN, N and O-implantation effectively compensates InAlN, and InGaN shows limited compensation with either N or F implantation.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 110699
- Report Number(s):
- SAND-95-0949C; CONF-951007-5; ON: DE95017888; TRN: 95:007236
- Resource Relation:
- Conference: 188. meeting of the Electrochemical Society, Chicago, IL (United States), 8-13 Oct 1995; Other Information: PBD: 1995
- Country of Publication:
- United States
- Language:
- English
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