Growth of detector-grade CZT by Traveling Heater Method (THM): An advancement
In this present work we report the growth of Cd{sub 0.9}Zn{sub 0.1}Te doped with In by a modified THM technique. It has been demonstrated that by controlling the microscopically flat growth interface, the size distribution and concentration can be drastically reduced in the as-grown ingots. This results in as-grown detector-grade CZT by the THM technique. The three-dimensional size distribution and concentrations of Te inclusions/precipitations were studied. The size distributions of the Te precipitations/inclusions were observed to be below the 10-{micro}m range with the total concentration less than 10{sup 5} cm{sup -3}. The relatively low value of Te inclusions/precipitations results in excellent charge transport properties of our as-grown samples. The ({mu}{tau}){sub e} values for different as-grown samples varied between 6-20 x 10{sup -3} cm{sup 2}/V. The as-grown samples also showed fairly good detector response with resolution of {approx}1.5%, 2.7% and about 3.8% at 662 keV for quasi-hemispherical geometry for detector volumes of 0.18 cm{sup 3}, 1 cm{sup 3} and 4.2 cm{sup 3}, respectively.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- DOE - NATIONAL NUCLEAR SECURITY ADMINISTRATION
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1020946
- Report Number(s):
- BNL-95068-2011-CP; NN2001000; TRN: US201116%%971
- Resource Relation:
- Conference: 2011 MRS Spring Meeting and Exhibit; San Francisco, CA; 20110425 through 20110429
- Country of Publication:
- United States
- Language:
- English
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