Electrochemical sulfur passivation of visible ({approximately}670nm) AlGaInP lasers
III-V based devices such as FETs, HBTs and lasers often have surface leakage and thermal degradation problems due to surface states which pin the Fermi level to the mid-gap. Sulfur based passivation processes are known to improve device performance by altering surface-state densities. The authors have developed a voltage-controlled anodic sulfur passivation scheme using Na{sub 2}S dissolved in ethylene glycol. Their process has repeatedly produced a {approximately}25% improvement in peak output power near the catastrophic damage limit in visible ({lambda} = 670 nm) AlGaInP edge-emitting lasers. The threshold current density and electrical characteristics were unchanged after catastrophic failure indicating that passivation raises the threshold for facet damage.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10192534
- Report Number(s):
- SAND-93-1127C; CONF-9311104-6; ON: DE94002293; TRN: 93:004063
- Resource Relation:
- Conference: 40. national symposium of the American Vacuum Society (AVS),Orlando, FL (United States),15-19 Nov 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
Similar Records
Lasing characteristics of visible AlGaInP/AlGaAs vertical-cavity lasers
Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes