CdSxTe1-x Alloying in CdS/CdTe Solar Cells
A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in thisinterdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubiczincblende (ZB) structure akin to CdTe, while those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment at~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 heat treatment (HT). Filmssputtered in O2 partial pressure have a much wider bandgap (BG) than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1018080
- Report Number(s):
- NREL/CP-5200-50156; TRN: US201113%%533
- Resource Relation:
- Journal Volume: 1324; Conference: Presented at the 2011 Materials Research Society Spring Meeting, 25-29 April 2011, San Francisco, California
- Country of Publication:
- United States
- Language:
- English
Optical Energy Gap of the Mixed Crystal CdS x Te 1- x
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journal | October 1973 |
Nanostructured CdS:O film: preparation, properties, and application
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journal | March 2004 |
Phase Diagram of the CdS-CdTe Pseudobinary System
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journal | August 1973 |
Phase behavior in the CdTe–CdS pseudobinary system
|
journal | July 2002 |
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