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Title: Polarized photomodulated reflectivity and photoluminescence studies of ordered InGaP{sub 2} under pressure

Abstract

Spontaneous ordering of ternary alloys grown on misoriented substrates has been of recent interest. Ordering induced band gap reduction, and valence band splittings exhibiting novel polarization properties have been investigated by theory and experiment. This paper discusses polarized photomodulated reflectivity (PR) and photoluminescence (PL) studies of MOCVD grown InGaP{sub 2} epilayers lattice-matched to a GaAs substrate. These structures were grown on a (001) face with a niisorientation of two degrees along <110>. The high degree of ordering has enabled us to accurately measure the crystal field splitting and additional structure not reported in the PR spectra. For the electric field E parallel to [110] two features in the PR spectra are seen; for E {parallel}[110], however, additional features are observed. Comparison with spectra of disordered samples of the same alloy composition has enabled a determination of the band gap reduction due to ordering. Linewidths of the PR peaks are approximately 5--10 meV which has enabled us to study them in detail as a function of hydrostatic pressure at cryogenic temperatures. The pressure dependence is slightly sublinear with the first order term of 8--9 meV/kbar for pressures well below the l-X crossover. Also observed is the indirect level crossing which occursmore » under pressure at about 40-kbar. A comparison of PR lineshapes at 1-bar is also presented at several commonly used experimental temperatures. Data indicate a substantial change in PR lineshapes, showing that interpretation of reflectivity data for these samples must be handled carefully.« less

Authors:
; ;  [1]; ;  [2]
  1. Missouri Univ., Columbia, MO (United States)
  2. Sandia National Labs., Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
OSTI Identifier:
10171381
Report Number(s):
SAND-94-1002C; CONF-940846-1
ON: DE94016556; BR: GB0103012; CNN: DAAL-03-91-G-0381; TRN: 94:015502
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 6. international conference on high pressures in semiconductor physics,Vancouver (Canada),22-24 Aug 1994; Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM PHOSPHIDES; ORDER PARAMETERS; ELECTRONIC STRUCTURE; GALLIUM PHOSPHIDES; SUPERLATTICES; CRYSTAL FIELD; VERY HIGH PRESSURE; ENERGY-LEVEL TRANSITIONS; 360606; PHYSICAL PROPERTIES

Citation Formats

Thomas, R J, Chandrasekhar, H R, Chandrasekhar, M, Jones, E D, and Schneider, Jr, R P. Polarized photomodulated reflectivity and photoluminescence studies of ordered InGaP{sub 2} under pressure. United States: N. p., 1994. Web.
Thomas, R J, Chandrasekhar, H R, Chandrasekhar, M, Jones, E D, & Schneider, Jr, R P. Polarized photomodulated reflectivity and photoluminescence studies of ordered InGaP{sub 2} under pressure. United States.
Thomas, R J, Chandrasekhar, H R, Chandrasekhar, M, Jones, E D, and Schneider, Jr, R P. 1994. "Polarized photomodulated reflectivity and photoluminescence studies of ordered InGaP{sub 2} under pressure". United States. https://www.osti.gov/servlets/purl/10171381.
@article{osti_10171381,
title = {Polarized photomodulated reflectivity and photoluminescence studies of ordered InGaP{sub 2} under pressure},
author = {Thomas, R J and Chandrasekhar, H R and Chandrasekhar, M and Jones, E D and Schneider, Jr, R P},
abstractNote = {Spontaneous ordering of ternary alloys grown on misoriented substrates has been of recent interest. Ordering induced band gap reduction, and valence band splittings exhibiting novel polarization properties have been investigated by theory and experiment. This paper discusses polarized photomodulated reflectivity (PR) and photoluminescence (PL) studies of MOCVD grown InGaP{sub 2} epilayers lattice-matched to a GaAs substrate. These structures were grown on a (001) face with a niisorientation of two degrees along <110>. The high degree of ordering has enabled us to accurately measure the crystal field splitting and additional structure not reported in the PR spectra. For the electric field E parallel to [110] two features in the PR spectra are seen; for E {parallel}[110], however, additional features are observed. Comparison with spectra of disordered samples of the same alloy composition has enabled a determination of the band gap reduction due to ordering. Linewidths of the PR peaks are approximately 5--10 meV which has enabled us to study them in detail as a function of hydrostatic pressure at cryogenic temperatures. The pressure dependence is slightly sublinear with the first order term of 8--9 meV/kbar for pressures well below the l-X crossover. Also observed is the indirect level crossing which occurs under pressure at about 40-kbar. A comparison of PR lineshapes at 1-bar is also presented at several commonly used experimental temperatures. Data indicate a substantial change in PR lineshapes, showing that interpretation of reflectivity data for these samples must be handled carefully.},
doi = {},
url = {https://www.osti.gov/biblio/10171381}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Aug 01 00:00:00 EDT 1994},
month = {Mon Aug 01 00:00:00 EDT 1994}
}

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