Heterogeneous reaction mechanisms and kinetics relevant to the CVD of semiconductor materials

Technical Report · Tue Mar 01 00:00:00 EST 1994

DOI:https://doi.org/10.2172/10146724· OSTI ID:10146724

Creighton, J R; Coltrin, M E

This report documents the state of the art in experimental and theoretical techniques for determining reaction mechanisms and chemical kinetics of heterogeneous reactions relevant to the chemical vapor deposition of semiconductor materials. It summarizes the most common ultra-high vacuum experimental techniques that are used and the types of rate information available from each. Several case studies of specific chemical systems relevant to the microelectronics industry are described. Theoretical methods for calculating heterogeneous reaction rate constants are also summarized.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10146724
• Report Number(s): SAND-94-0033; ON: DE94011001; BR: GB0103012; TRN: AHC29410%%21
• Resource Relation: Other Information: PBD: Mar 1994
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
SEMICONDUCTOR MATERIALS
CHEMICAL VAPOR DEPOSITION
CHEMICAL REACTION KINETICS
SILICON
HYDROGEN
DESORPTION
TUNGSTEN
TUNGSTEN FLUORIDES
ALUMINIUM
SILICON OXIDES
MEASURING METHODS
MATHEMATICAL MODELS
360601
400201
PREPARATION AND MANUFACTURE
CHEMICAL AND PHYSICOCHEMICAL PROPERTIES