Resistivity measurements on the neutron irradiated detector grade silicon materials
Resistivity measurements under the condition of no or low electrical field (electrical neutral bulk or ENB condition) have been made on various device configurations on detector grade silicon materials after neutron irradiation. Results of the measurements have shown that the ENB resistivity increases with neutron fluence ({Phi}{sub n}) at low {phi}{sub n} (<10{sup 13} n/cm{sup 2}) and saturates at a value between 300 and 400 k{Omega}-cm at {phi}{sub n} {approximately}10{sup 13} n/cm{sup 2}. Meanwhile, the effective doping concentration N{sub eff} in the space charge region (SCR) obtained from the C-V measurements of fully depleted p{sup +}/n silicon junction detectors has been found to increase nearly linearly with {phi}{sub n} at high fluences ({phi}{sub n} > 10{sup 13} n/cm{sup 2}). The experimental results are explained by the deep levels crossing the Fermi level in the SCR and near perfect compensation in the ENB by all deep levels, resulting in N{sub eff} (SCR) {ne} n or p (free carrier concentrations in the ENB).
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10136664
- Report Number(s):
- BNL-49822; CONF-9307163-2; ON: DE94009083; TRN: 94:006638
- Resource Relation:
- Conference: 1. international conference on large scale applications and radiation hardness of semiconductor detectors,Florence (Italy),7-9 Jul 1993; Other Information: PBD: Nov 1993
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SI SEMICONDUCTOR DETECTORS
ELECTRIC CONDUCTIVITY
NEUTRON FLUENCE
SPACE CHARGE
PHYSICAL RADIATION EFFECTS
MOS TRANSISTORS
440104
440200
HIGH ENERGY PHYSICS INSTRUMENTATION
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS