Effect of Te Inclusions on Internal Electric Field of CdMnTe Gamma-Ray Detectors
We studied two separate as-grown CdMnTe crystals by Infrared (IR) microscopy and Pockels effect imaging, and then developed an algorithm to analyze and visualize the electric field within the crystals’ bulk. In one of the two crystals the size and distribution of inclusions within the bulk promised to be more favorable in terms of efficiency as a detector crystal. However, the Te inclusions were arranged in characteristic ‘planes’. Pockels imaging revealed an accumulation of charges in the region of these planes. We demonstrated that the planes induced stress within the bulk of the crystal that accumulated charges, thereby causing non-uniformity of the internal electric field and degrading the detector’s performance.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- DOE - National Nuclear Security Administration
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1013437
- Report Number(s):
- BNL-90849-2009-CP; NN2001000; TRN: US201110%%659
- Resource Relation:
- Conference: SPIE Optics and Photonics; San Diego, CA; 20090802 through 20080806
- Country of Publication:
- United States
- Language:
- English
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