Critical analysis of via hole etching with a manufacturable RIE process using SiCl{sub 4}/BCl{sub 3}/Cl{sub 2} chemistries

Conference · Fri Dec 31 00:00:00 EST 1993

OSTI ID:10132366

Lovejoy, M L; Shul, R J; Rieger, D J ^[1]; Constantine, C ^[2]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Plasma-Therm I.P. Inc., St. Petesburg, FL (United States)

A manufacturable RIE (reactive ion etching) process for via hole etching is critically analyzed to optimize a non-CFC, environmentally favorable etch process. The strong effect on via hole profile and etch rates due to various thicknesses of wafer carriers that are used for mechanical support during the processing of 50--100 {mu}m GaAs wafers and of the corresponding cathode covering materials are studied. An optimized via hole process that uses a single-apply photoresist (PR) process with high etch rates is presented.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10132366
• Report Number(s): SAND-93-2637C; CONF-940588-2; ON: DE94007736; BR: GB0103012
• Resource Relation: Conference: 1994 conference on GaAs manufacturing,Las Vegas, NV (United States),2-5 May 1994; Other Information: PBD: [1993]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ETCHING
INTEGRATED CIRCUITS
FABRICATION
OPENINGS
426000
360601
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
PREPARATION AND MANUFACTURE