The effect of co-implantation on the electrical activity of implanted carbon in GaAs
We have undertaken a systematic study of the effect of co- implantation on the electrical properties of C implanted in GaAs. Two effects have been studied, the additional damage caused by co- implantation and the stoichiometry in the implanted layer. A series of co-implant ions were used: group III (B, Al, Ga), group V (N, P, As) and noble gases (Ar, Kr). Co-implantation of ions which create an amorphous layer was found to increase the electrical activity of C. Once damage was created, maintaining stoichiometric balance by co-implantation of a group III further increased the fraction of electrically active carbon impurities. Co-implantation of Ga and rapid thermal annealing at 950{degree}C for 10s resulted in carbon activation as high as 68%, the highest value ever reported.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10125482
- Report Number(s):
- LBL-31207; CONF-911202-63; ON: DE92008307
- Resource Relation:
- Conference: Annual fall meeting of the Materials Research Society (MRS),Boston, MA (United States),2-6 Dec 1991; Other Information: PBD: Nov 1991
- Country of Publication:
- United States
- Language:
- English
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