Ionizing radiation effects on silicon test structures

Technical Report · Wed Dec 01 00:00:00 EST 1993

DOI:https://doi.org/10.2172/10119896· OSTI ID:10119896

Kraner, H W; Beuttenmuller, R; Chen, W; Kierstead, J A; Li, Z; Zhang, Y ^[1]; Dou, L ^[2]; Fretwurst, E; Lindstroem, G ^[3]

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1. Brookhaven National Lab., Upton, NY (United States)
2. Wayne State Univ., Detroit, MI (United States)
3. Univ. of Hamburg (Germany)

The effects of {sup 60}Co gamma irradiation on MOSCAPS and special junction diode detectors have been studied. The capacitors were used to ellicit the charge accumulation and anneal in two types of thermally grown oxides representative of those used in routine detector processing. Ion implanted, oxide passivated junction detectors having 0.25 and 1 cm{sup 2} areas and perimeter to area ratios of 1 (a square), 2 and 5 were designed and constructed to amplify the ionizing effects expected to largely affect junction edges through changes in fixed oxide charges. Detectors were exposed to over 4 Mrad and showed clear increases in leakage current in proportion to the junction edge length. Annealing schedules were determined to provide a continuous response to incremental irradiations and subsequent room temperature anneals of leakage current. Besides an increase in gate threshold, little effect on the C(V) response was found. PISCES simulation of the edge fields using different fixed oxide charge revealed regions of very high lateral fields near the junction edges for fixed charges in the 2 {times} 10{sup 12}/cm{sup 2} range expected from the capacitor studies which could be responsible for the observed leakage currents.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 10119896
• Report Number(s): BNL-49823; CONF-9307163-1; ON: DE94006060; TRN: 94:003549
• Resource Relation: Conference: 1. international conference on large scale applications and radiation hardness of semiconductor detectors,Florence (Italy),7-9 Jul 1993; Other Information: PBD: Dec 1993
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
JUNCTION DETECTORS
PHYSICAL RADIATION EFFECTS
CAPACITORS
RADIATION DOSES
COMPUTERIZED SIMULATION
EXPERIMENTAL DATA
CAPACITANCE
THEORETICAL DATA
440200
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS