Method and apparatus for aluminum nitride monocrystal boule growth
- Brookfield, CT
A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source material and a growing AlN crystal boule. This crucible has a thin wall thickness in at least that portion housing the growing AlN crystal boule. Other components include a susceptor, in case of an inductive heating, or a heater, in case of a resistive heating, a thermal insulation enclosing the susceptor or heater effective to provide a thermal gradient inside the crucible in the range of 5-100.degree. C./cm and a furnace chamber capable of being operated from a vacuum (<0.1 torr) to a gas pressure of at least 4000 torr through filling or flowing a nitrogen gas or a mixture of nitrogen gas and argon gas. The high temperatures contribute to a high boule growth rate and the thin wall thickness contributes to reduced imparted stress during boule removal.
- Research Organization:
- CAO (Use CBFO - Carlsbad Area Office, Carlsbad, NM (United States))
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-05ER84232
- Assignee:
- Fairfield Crystal Technology, LLC (New Milford, CT)
- Patent Number(s):
- 7,524,376
- Application Number:
- 11/789,590; TRN: US201018%%33
- OSTI ID:
- 986552
- Country of Publication:
- United States
- Language:
- English
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journal | December 1977 |
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journal | November 1992 |
On mechanisms of sublimation growth of AlN bulk crystals
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journal | April 2000 |
Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
|
journal | June 2004 |
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