Optic probe for semiconductor characterization
Patent
·
OSTI ID:984969
- Denver, CO
- Yerevan, AM
Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).
- Research Organization:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- 7,420,669
- Application Number:
- 10/543,970
- OSTI ID:
- 984969
- Country of Publication:
- United States
- Language:
- English
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