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Title: Thin Silicon MEMS Contact-Stress Sensor

Abstract

This thin, MEMS contact-stress sensor continuously and accurately measures time-varying, solid interface loads over tens of thousands of load cycles. The contact-stress sensor is extremely thin (150 {mu}m) and has a linear output with an accuracy of {+-} 1.5% FSO.

Authors:
; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
984646
Report Number(s):
LLNL-PROC-433955
TRN: US201016%%1413
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: Presented at: Hilton Head Solid-State Sensors, Actuators, and Microsystems Workshop, Hilton Head, SC, United States, Jun 06 - Jun 10, 2010
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ACCURACY; ACTUATORS; SILICON

Citation Formats

Kotovksy, J, Tooker, A, and Horsley, D. Thin Silicon MEMS Contact-Stress Sensor. United States: N. p., 2010. Web.
Kotovksy, J, Tooker, A, & Horsley, D. Thin Silicon MEMS Contact-Stress Sensor. United States.
Kotovksy, J, Tooker, A, and Horsley, D. 2010. "Thin Silicon MEMS Contact-Stress Sensor". United States. https://www.osti.gov/servlets/purl/984646.
@article{osti_984646,
title = {Thin Silicon MEMS Contact-Stress Sensor},
author = {Kotovksy, J and Tooker, A and Horsley, D},
abstractNote = {This thin, MEMS contact-stress sensor continuously and accurately measures time-varying, solid interface loads over tens of thousands of load cycles. The contact-stress sensor is extremely thin (150 {mu}m) and has a linear output with an accuracy of {+-} 1.5% FSO.},
doi = {},
url = {https://www.osti.gov/biblio/984646}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri May 28 00:00:00 EDT 2010},
month = {Fri May 28 00:00:00 EDT 2010}
}

Conference:
Other availability
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