Thin Silicon MEMS Contact-Stress Sensor
Abstract
This thin, MEMS contact-stress sensor continuously and accurately measures time-varying, solid interface loads over tens of thousands of load cycles. The contact-stress sensor is extremely thin (150 {mu}m) and has a linear output with an accuracy of {+-} 1.5% FSO.
- Authors:
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 984646
- Report Number(s):
- LLNL-PROC-433955
TRN: US201016%%1413
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Conference
- Resource Relation:
- Conference: Presented at: Hilton Head Solid-State Sensors, Actuators, and Microsystems Workshop, Hilton Head, SC, United States, Jun 06 - Jun 10, 2010
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; ACCURACY; ACTUATORS; SILICON
Citation Formats
Kotovksy, J, Tooker, A, and Horsley, D. Thin Silicon MEMS Contact-Stress Sensor. United States: N. p., 2010.
Web.
Kotovksy, J, Tooker, A, & Horsley, D. Thin Silicon MEMS Contact-Stress Sensor. United States.
Kotovksy, J, Tooker, A, and Horsley, D. 2010.
"Thin Silicon MEMS Contact-Stress Sensor". United States. https://www.osti.gov/servlets/purl/984646.
@article{osti_984646,
title = {Thin Silicon MEMS Contact-Stress Sensor},
author = {Kotovksy, J and Tooker, A and Horsley, D},
abstractNote = {This thin, MEMS contact-stress sensor continuously and accurately measures time-varying, solid interface loads over tens of thousands of load cycles. The contact-stress sensor is extremely thin (150 {mu}m) and has a linear output with an accuracy of {+-} 1.5% FSO.},
doi = {},
url = {https://www.osti.gov/biblio/984646},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri May 28 00:00:00 EDT 2010},
month = {Fri May 28 00:00:00 EDT 2010}
}
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