All diamond self-aligned thin film transistor
Patent
·
OSTI ID:984484
- Champaign, IL
A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Number(s):
- 7,394,103
- Application Number:
- 11/226,703
- OSTI ID:
- 984484
- Country of Publication:
- United States
- Language:
- English
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