Real-time observation of the dry oxidation of the Si (100) surface with ambient pressure x-ray photoelectron spectroscopy
Journal Article
·
· Applied Physics Letters
OSTI ID:982895
We have applied ambient-pressure x-ray photoelectron spectroscopy with Si 2p chemical shifts to study the real-time dry oxidation of Si(100), using pressures in the range of 0.01-1 Torr and temperatures of 300-530 oC, and examining the oxide thickness range from 0 to ~;;25 Angstrom. The oxidation rate is initially very high (with rates of up to ~;;225 Angstrom/h) and then, after a certain initial thickness of the oxide in the range of 6-22 Angstrom is formed, decreases to a slow state (with rates of ~;;1.5-4.0 Angstrom/h). Neither the rapid nor the slow regime is explained by the standard Deal-Grove model for Si oxidation.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Advanced Light Source Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 982895
- Report Number(s):
- LBNL-3112E; APPLAB; TRN: US1004322
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 012110; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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