Structural Characterization of Doped GaSb Single Crystals by X-ray Topography
We characterized GaSb single crystals containing different dopants (Al, Cd and Te), grown by the Czochralski method, by x-ray topography and high angular resolution x-ray diffraction. Lang topography revealed dislocations parallel and perpendicular to the crystal's surface. Double-crystal GaSb 333 x-ray topography shows dislocations and vertical stripes than can be associated with circular growth bands. We compared our high-angular resolution x-ray diffraction measurements (rocking curves) with the findings predicted by the dynamical theory of x-ray diffraction. These measurements show that our GaSb single crystals have a relative variation in the lattice parameter ({Delta}d/d) on the order of 10{sup -5}. This means that they can be used as electronic devices (detectors, for example) and as x-ray monochromators.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 978296
- Report Number(s):
- BNL-91119-2010-CP; KC020401G; TRN: US1004220
- Resource Relation:
- Conference: 13th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP XIII 2009); Wheeling, West Virginia, USA; 20090913 through 20090917
- Country of Publication:
- United States
- Language:
- English
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