High dose Xe ion irradiation of yttria stabilized zirconia : influence of sputtering on implanted ion profile and retained damage /.
- Ivan Viktorovich
- Kurt E.
Fully-stabilized zirconia is known as a radiation resistant material. The objective of many experinients on zirconia has been to test the susceptibility of this material to amorphization. Because zirconia exhibits high radiation tolerance, this has made very high fluence ion irradiation experiments a necessity and so, additional iiradiation-inducetl effects such as surface sputtering become important. In this paper, we present results from 340 keV Xe' irradiations of yttria-stabilized zirconia (YSZ) to fluences ranging froiri 1.10' to 1.5.1OZ1 ions/m2. No iunorphization of YSZ was observed after irradiation to even the highest ion fluences. To assess sputtering effects at high fluence, an analytical model was developed, using ion range and damage distribulions calculated using Monte Carlo simulations for ion-solid interactions. Analysis results and experimental data revealed that at high fluences, the implanted ion and damago distribution profiles are significantly modified by sputtering.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 975780
- Report Number(s):
- LA-UR-01-5576; TRN: US201018%%867
- Resource Relation:
- Conference: Submitted to: Proceedings of REI-11 [Eleventh International Conference on Radiation Effects in Insulators, Lisbon, Portugal, 2001]
- Country of Publication:
- United States
- Language:
- English
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