Growth and electrical rectification in axial in-situ doped p-n junction germanium nanowires
- Los Alamos National Laboratory
- BROWN U
In this work, we demonstrate the vapor-liquid-solid (VLS) growth and electrical properties of axial in-situ doped p-n junction Ge nanowires (NWs). In-situ doping of the NWs was accomplished by introducing dopant gases (diborane and phosphine) together with GeH{sub 4} in the growth process. By changing dopant sources during growth, a p-n junction can be realized along the axis of the NWs. Metal contacts to the wires were defined using e-beam lithography patterning, followed by 100 nm Ni sputter deposition and lift-off. Four-point measurements of the fabricated devices at room temperature and at 77 K clearly show rectification with on/off current ratio up to two orders of magnitude when the bias is applied across the p-n junction. The ideality factor of the junction current points to a significant generation-recombination contribution. The Ohmic characteristics in the p and n regions outside the junction make it possible to estimate the doping levels. We also observed backgate control of the NW junction current.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 974298
- Report Number(s):
- LA-UR-09-07067; LA-UR-09-7067; TRN: US201007%%474
- Resource Relation:
- Conference: Proc. 2nd Intl Workshop on Nanotechnology and Application ; September 16, 2009 ; HoChiMinh City, Vietnam
- Country of Publication:
- United States
- Language:
- English
Similar Records
Axial Ge/Si nanowire heterostructure tunnel FETs.
Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography