Graphene Growth by Metal Etching on Ru (0001)
Journal Article
·
· Physical Review B
OSTI ID:973528
Low-energy electron microscopy (LEEM) reveals a new mode of graphene growth on Ru(0001) in which Ru atoms from a step edge are injected under a growing graphene sheet. The injected atoms can form under-graphene islands, or incorporate into the topmost Ru layer, thereby increasing its density and forming dislocation networks. Density functional calculations imply that Ru islands nucleated between the graphene layer and the substrate are energetically stable; scanning tunneling microscopy (STM) reveals that dislocation networks exist near step edges.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 973528
- Report Number(s):
- LBNL-2548E; TRN: US201006%%584
- Journal Information:
- Physical Review B, Journal Name: Physical Review B; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth and Stability of Titanium Dioxide Nanoclusters on Graphene/Ru(0001)
Herringbone and triangular patterns of dislocations in Ag, Au, and AgAu alloy films on Ru(0001).
O-induced modification of growth of thin Cu films on Ru(0001)
Journal Article
·
Tue Aug 29 00:00:00 EDT 2017
· Journal of Physical Chemistry. B, Condensed Matter, Materials, Surfaces, Interfaces and Biophysical Chemistry
·
OSTI ID:973528
+2 more
Herringbone and triangular patterns of dislocations in Ag, Au, and AgAu alloy films on Ru(0001).
Journal Article
·
Wed Oct 01 00:00:00 EDT 2008
· Proposed for publication in Surface Science.
·
OSTI ID:973528
+6 more
O-induced modification of growth of thin Cu films on Ru(0001)
Journal Article
·
Mon Dec 01 00:00:00 EST 1997
· Physical Review, B: Condensed Matter
·
OSTI ID:973528
+2 more