Ultrafast carrier capture in InGaAs quantum posts

Journal Article · Thu Jan 01 00:00:00 EST 2009 · Applied Physics Letters

OSTI ID:972054

Talbayev, Diyar ^[1]; Taylor, Antoinette J ^[1]; Stehr, D ^[2]; Morris, C M ^[2]; Wagner, M ^[3]; Kim, H C ^[2]; Schneider, H ^[3]; Petroff, P M ^[2]; Sherwin, M S ^[2]

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1. Los Alamos National Laboratory
2. UCSB
3. GERMANY

To explore the capture dynamics of photoexcited carriers in semiconductor quantum posts, optical pump - THz probe and time-resolved photoluminescence spectroscopy were performed. The results of the THz experiment show that after ultrafast excitation, electrons relax within a few picoseconds into the quantum posts, which are acting as efficient traps. The saturation of the quantum post states, probed by photoluminescence, was reached approximately at ten times the quantum post density in the samples. The results imply that quantum posts are posts highly attractive nanostructures for future device applications.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC52-06NA25396
• OSTI ID: 972054
• Report Number(s): LA-UR-09-06516; LA-UR-09-6516; APPLAB; TRN: US201005%%156
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRONS
EXCITATION
NANOSTRUCTURES
PHOTOLUMINESCENCE
PROBES
SATURATION
SPECTROSCOPY