A near infrared organic photodiode with gain at low bias voltage
- Los Alamos National Laboratory
We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 972052
- Report Number(s):
- LA-UR-09-06513; LA-UR-09-6513; APPLAB; TRN: US201005%%154
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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