Depth-resolved band gap in Cu(In,Ga)(S,Se)2 thin films
The surface composition of Cu(In,Ga)(S,Se)2 (?CIGSSe?) thin films intrinsically deviates from the corresponding bulk composition, which also modifies the electronic structure and thus the optical properties.We have used a combination of photon and electron spectroscopies with different information depths to gain depth-resolved information on the band gap energy (Eg) in CIG(S)Se thin films. We find an increasing Eg with decreasing information depth, indicating the formation of a surface region with significantly higher Eg. This Eg-widened surface region extends further into the bulk of the sulfur-free CIGSe thin film compared to the CIGSSe thin film.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Advanced Light Source Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 971553
- Report Number(s):
- LBNL-2341E; APPLAB; TRN: US201004%%197
- Journal Information:
- Applied Physics Letters, Vol. 93; Related Information: Journal Publication Date: December 2008; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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