An Auger Sputter Profiling Study of Nitrogen and Oxygen Ion Implantations in Two Titanium Alloys

Technical Report · Mon Jul 31 00:00:00 EDT 1989

OSTI ID:968219

Barton, B. D., Pope, L. E., Wittberg, T. N.

Samples of two titanium alloys, Ti-6A1-4V and Ti-15V-3Cr-3Sn-3A1, were ion implanted with a combination of nitrogen (N+) and oxygen (O+). For each alloy, implantation parameters were chosen to give implanted nitrogen concentrations of approximately 10 or 50 atomic percent, from a depth of 100 nanometers to a depth of 400 nanometers. In all but one case, dual energy (200 keV and 90 keV) implantations of nitrogen were used to give a relatively uniform nitrogen concentration to a depth of 300 nanometers. In each case, oxygen was implanted at 35 keV, following the nitrogen implantation, to give an oxygen-enriched region near the surface. The implanted samples were then examined by Auger electron spectroscopy (AES) combined with argon ion sputtering. In order to determine the stoichiometry of the nitrogen implanted regions, it was necessary to determine the N (KVV) contribution to the overlapping N (KVV) and Ti (LMM) Auger transitions. It was also necessary to correct for the ion-bombardment-induced compositional changes which have been described in an earlier study of titanium nitride thin films. The corrected AES depth profiles were in good agreement with theoretical predictions.

• Research Organization: EG&G Mound Applied Technologies, Miamisburg, OH; Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univeristy of Dayton Research Institute, Dayton, OH
• Sponsoring Organization: USDOE
• OSTI ID: 968219
• Report Number(s): MLM-3591(OP)
• Country of Publication: United States
• Language: English