A low-emittance APS lattice with alternating horizontal beta functions at insertion devices.
Previously we looked at the possibility of reducing the horizontal beta function in a straight section in order to optimize the beam properties for certain uses. This is difficult to do as an insertion because of the many constraints on the APS lattice. In particular, the emittance inevitably increases, and it can only be done for one or two sectors. We noted in that an ESRF-style lattice with alternating high- and low-{beta}{sub s} sectors might provide reasonably good emittance for the APS, while providing two types of beta function. In this note, we present such a lattice that not only provides alternating {beta}{sub s}, but also improved emittance.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 965254
- Report Number(s):
- ANL/APS/LS-317; TRN: US0903806
- Country of Publication:
- United States
- Language:
- ENGLISH
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