Diameter-dependent electronic transport properties of Au-catalyst/Ge-nanowire Schottky diodes

Journal Article · Tue Jan 01 00:00:00 EST 2008 · Physical Review Letters

OSTI ID:960951

Picraux, S Thomas ^[1]; Leonard, Francois ^[2]; Swartzentruber, Brian S ^[2]; Talin, A Alee ^[2]

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1. Los Alamos National Laboratory
2. SNL

We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a diameter dependence of both the depletion width and the electron-hole recombination time. The recombination time is dominated by surface contributions and depends linearly on the nanowire diameter.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC52-06NA25396
• OSTI ID: 960951
• Report Number(s): LA-UR-08-06751; LA-UR-08-6751; PRLTAO; TRN: US201008%%855
• Journal Information: Physical Review Letters, Vol. 102; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATALYSTS
CHARGE TRANSPORT
GERMANIUM
GOLD
QUANTUM WIRES
SCHOTTKY EFFECT
SEMICONDUCTOR MATERIALS
TRANSPORT